Integrated circuit materials

CMP Pad

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  CMP Pad

  CMP Pad is a technology-intensive product that spans multiple disciplines such as polymer chemistry, polymer physics, organic synthesis, fluid mechanics, tribology, and precision machining.

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  CMP Slurry

  CMP Slurry is a colloid with uniformly dispersed particles. It can form an oxide film on the surface of silicon wafers, which is then removed by the abrasive particles in the slurry to achieve the polishing effect. Generally, factors such as the flow rate, viscosity, temperature, composition, and pH value of the slurry will affect the removal effect.

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  CMP Chemical

  It is mainly used to remove impurities such as dust particles, organic substances, inorganic substances, metal ions, and oxides remaining on the surface of wafers. It meets the extremely high cleanliness requirements of integrated circuit manufacturing and plays an important role in the yield rate of wafer production.

Advanced semiconductor packaging

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  Advanced Packaging PSPI

  GHI-line exposure<br> Resolution: 5~10 μm<br> Curing in high/low-temperature<br> Film thickness: 5~15 μm<br> Curing temperature: 200~400 °C<br> Superior mechanical/electrical properties and adhesion to copper

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  Temporary Bonding Adhesive(TBA)

  Bonding at room temperature and low stress<br> Excellent high-temperature resistance<br> (withstands long-term exposure to 300°C for > 1.5 hours)<br> Debonding achievable via mechanical or laser methods (248nm/308nm/355nm)

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  Wafer-Level Insulating Passivation Layers

  Wafer-Level Passivation Layers (PI/PSPI) are critical materials utilized in Wafer-Level Packaging (WLP) processes. Applied via spin coating and patterned through exposure and development, they form a permanent, patterned protective layer. Following high-temperature curing, these layers provide excellent passivation protection and stress buffering for the chip surface, effectively enhancing device reliability.

High-end wafer photoresist products

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  ArF/KrF

  Semicondcutor photoresists are critical materials in the semiconductor lithography process. During lithography, after steps such as coating, pre-baking, exposure, post-exposure baking, and development, the circuit pattern can be transferred from the mask to the photoresist, and then to the silicon wafer through etching. With the shrink of line width in integrated circuits and the improvement of integration, the technical difficulty of photoresist R&D has increased significantly, becoming one of the key technologies to continue Moore's Law.

Semiconductor display materials

OLED

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  YPI

  Viscosity: 4000~7000 cP<br> Nonvolatile matter: 10%~20%<br> Film thickness: 5~15 μm<br> Curing Temperature: 450~480 ℃<br> 1% weight loss temperature: ＞560 ℃<br> Superior optical/mechanical properties

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  PSPI

  GHI-line exposure<br> Resolution: 2~3 μm<br> High/low-sensitivity PSPI<br> Film thickness: 1~5 μm<br> Curing temperature: 250~280 °C<br> Superior optical/mechanical properties

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  TFE INK

  Viscosity: 20~22 cP<br> Water content: ＜50 ppm<br> UV curing wavelength: 395 nm<br> Film thickness: 6~15 μm<br> Superior optical properties

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  BPDL

  Resolution: 5 μm<br> Particle size: 50~70 nm<br> Curing temperature: 250~280 °C<br> Film thickness: 1~5 μm<br> Optical density (OD): >1 /μm

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  PFAS free PSPI

  GHI-ine exposure<br> Resolution: 2~3 μm<br> High/low-sensitivity PFAS free PSPI<br> Film thickness: 1~5 μm<br> Curing temperature: 250~280 °C<br> Superior optical/mechanical properties

LCD

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  Polyimide for alignment film

  Viscosity: 5~40 cP<br> Nonvolatile matter: 3%~8%<br> Curing Temperature: 230 ℃<br> Voltage holding ratio: ≥99%<br> Film hardness: ≥3H

MICRO-LED

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  PSPI

  GHI-ine exposure<br> Resolution: 3 μm<br> Film thickness: 1~5 μm<br> Curing temperature: 250~280 °C<br> multiple curing processes/good adhesion to metal substrates<br> Superior optical/mechanical properties

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  Black Bank

  Resolution: 10 μm<br> Film thickness: 3~8 μm<br> Curing temperature: 150~250 °C<br> Optical density (OD): >1 /μm

General consumables for printing and copying